Heterojunction field effect transistors (HJFETs) for a readout circuit of a cryogenically cooled far-infrared detector

Details Heterojunction field effect transistors (HJFETs) for a readout circuit of a cryogenically cooled far-infrared detector Heterojunction field effect transistors (HJFETs) for a readout circuit of a cryogenically cooled far-infrared detector

Aug 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3354..281h&link_type=abstract

Proc. SPIE Vol. 3354, p. 281-288, Infrared Astronomical Instrumentation, Albert M. Fowler; Ed.

Astronomy and Astrophysics

Astronomy

Scientific paper

Deep cryogenic field effect transistors (FETs) which are able to operate under liquid helium temperatures have significant advantages over conventional cryogenic Silicon- Junction-FETs or Si-metal-oxide-semiconductor-FETs as readout circuits of a far-IR focal plane array detector: simple operation, simple system structures, and large transconductance. We report the testing of an InGaAs-channel heterojunction field effect transistor (HJFET) operating at 4.2 K designed for a readout circuit of a cryogenically cooled far-IR detector. In this report, we present current- voltage characteristics, transconductance, low-frequency noise (LFN) characteristics, and the influence of the gate leakage current on the LFN characteristics of the HJFET. Input-referred noise voltage as low as a few hundred nanovolts at 1 Hz was measured for the HJFET with a 100 X 100 micrometers (superscript 2) gate area. We discuss further possibilities for the fabrication of HJFETs with an extremely small input current of less than 10(superscript -15) A.

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