Heavy ion radiation damage simulations for CMOS image sensors

Details Heavy ion radiation damage simulations for CMOS image sensors Heavy ion radiation damage simulations for CMOS image sensors

Oct 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5578..323m&link_type=abstract

Photonics North 2004: Optical Components and Devices. Edited by Armitage, John C.; Fafard, Simon; Lessard, Roger A.; Lampropoul

Computer Science

1

Scientific paper

Damage in CMOS image sensors caused by heavy ions with moderate energy (~10MeV) are discussed through the effects on transistors and photodiodes. SRIM (stopping and range of ions in matter) simulation results of heavy ion radiation damage to CMOS image sensors implemented with standard 0.35µm and 0.18µm technologies are presented. Total ionizing dose, displacement damage and single event damage are described in the context of the simulation. It is shown that heavy ions with an energy in the order of 10 MeV cause significant total ionizing dose and displacement damage around the active region in 0.35µm technology, but reduced effects in 0.18µm technology. The peak of displacement damage moves into the substrate with increasing ion energy. The effect of layer structure in the 0.18 and 0.35 micron technologies on heavy ion damage is also described.

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