Growth and properties of semi-insulating CdZnTe for radiation detector applications

Details Growth and properties of semi-insulating CdZnTe for radiation detector applications Growth and properties of semi-insulating CdZnTe for radiation detector applications

Jul 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3446....2s&link_type=abstract

Proc. SPIE Vol. 3446, p. 2-9, Hard X-Ray and Gamma-Ray Detector Physics and Applications, F. Patrick Doty; Richard B. Hoover; Ed

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The growth and properties of semi-insulating CdZnTe for nuclear radiation detector applications are reviewed. The current state of the high-pressure Bridgman growth and the potentials of the conventional vertical and horizontal Bridgman techniques to grow radiation detector material are discussed. The characteristic macroscopic and microscopic defects of high-pressure Bridgman grown CdZnTe ingots, such as cracks, pipes, inclusions, precipitates, grain boundaries and their effect on the electrical and charge trapping properties of the material are reviewed.

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