Computer Science
Scientific paper
Jan 1990
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990phdt.......112t&link_type=abstract
Thesis (PH.D.)--RENSSELAER POLYTECHNIC INSTITUTE, 1990.Source: Dissertation Abstracts International, Volume: 52-02, Section: B,
Computer Science
Mercury Cadmium Telluride, N-Type
Scientific paper
This study involved the epitaxial growth and electrical characterization of arsenic and indium doped Hg _{1-x}Cd_ xTe layers grown by organometallic vapor phase epitaxy. Dimethylcadmium (DMCd), diisopropyltelluride and elemental mercury were used as the reactant sources. Arsine in hydrogen and trimethylindium (TMIn) were used as the dopant sources. Arsenic doped layers exhibited a p-type characteristic stable under low temperature anneal. These layers had high Hall mobility values over the entire doping range with a typical low temperature value of 7 times 10^2 cm^2 /Vs for a 1.5 times 10 ^{16} cm^{ -3} doped layer with x = 0.27. Dependence of the net acceptor concentration on arsine and mercury partial pressure was investigated in conjunction with SIMS analysis to study the arsenic incorporation. The incorporation of atomic arsenic was found to saturate at higher arsenic flow rates, resulting in the acceptor concentration saturating at ~10^{17 } cm^{-3}. The layers were found to exhibit negligible compensation due to the arsenic related donor. A model was presented to explain the incorporation of arsenic. The indium doped layers exhibited n-type characteristics with the net donor concentration varying linearly with TMIn partial pressure and saturating at ~ 5 times 10^ {18} cm^{-3} . A 3 times 10^ {16} cm^{-3} doped layer with a cadmium fraction of x = 0.23 exhibited a low temperature electron mobility of 7.3 times 10^4 cm ^2/Vs. Dependence of the donor concentration on TMIn and mercury pressure and the study of low temperature electron mobility were used to understand the indium incorporation. The low temperature electron mobility characteristic suggests the absence of compensation in the saturation regime of doping characteristics. The optical bandedge exhibited a shift toward higher energy with increasing doping. This shift is due to the Burstein-Moss effect in the degenerate n-type HgCdTe.
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