Grating gated FETs as narrowband tunable terahertz detectors

Details Grating gated FETs as narrowband tunable terahertz detectors Grating gated FETs as narrowband tunable terahertz detectors

May 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5790..116s&link_type=abstract

Terahertz for Military and Security Applications III. Edited by Hwu, R. Jennifer; Woolard, Dwight L.; Rosker, Mark J. Procee

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Grating gated field effect transistors (FETs) are potentially important as electronically tunable terahertz detectors with spectral bandwidths of the order of 50 GHz. Their utility depends on being able to 1) use the intrinsic high speed in a heterodyne mixer or 2) sacrifice speed for sufficient sensitivity to be an effective incoherent detector. In its present form the grating gated FET will support IF frequencies up to ~10 GHz, an acceptable bandwidth for most heterodyne applications. By separating the resonant plasmon absorption from the responsivity mechanism, it appears that a tuned, narrow terahertz spectral band bolometer can be fabricated with NEP ~ 10-11 watts/√Hz and response times of the order of 30 msecs, useful in a passive multispectral terahertz imaging system.

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