Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy

Details Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy

Dec 2003

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003spie.5209...67s&link_type=abstract

Materials for Infrared Detectors III. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volum

Computer Science

Scientific paper

The growth and characterization of Au-doped HgCdTe layers on (211)B CdTe/Si substrates grown by molecular beam epitaxy reported. The electrical properties of these layers studied for diffusion are presented. For ex-situ experiments, thin Au layers were deposited by evaporation and annealed at various temperatures and times to investigate the p-type doping properties and diffusion of Au in HgCdTe. The atomic distribution of the diffused Au was determined by secondary ion mass spectroscopy. We found clear evidence for p-type doping of HgCdTe:Au by in-situ and ex-situ methods. For in-situ doped layers, we found that, the Au cell temperature needs to be around 900°C to get p-type behavior. The diffusion coefficient of Au in HgCdTe was calculated by fitting SIMS profiles after annealing. Both complementary error functions and gaussian fittings were used, and were in full agreement. Diffusion coefficient as low as 8x10-14cm2/s observed for a sample annealed at 250°C and slow component of a diffusion coefficient as low as 2x10-15 cm2/s observed for a sample annealed at 300°C. Our preliminary results indicate no appreciable diffusion of Au in HgCdTe under the conditions used in these studies. Further work is in progress to confirm these results and to quantify our SIMS profiles.

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