Computer Science – Performance
Scientific paper
Apr 2007
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..447a&link_type=abstract
SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 447-448 (2007).
Computer Science
Performance
Iii-V Semiconductors, Photoconduction And Photovoltaic Effects, Iii-V Semiconductor-To-Semiconductor Contacts, P-N Junctions, And Heterojunctions, Iii-V Semiconductors
Scientific paper
This paper briefly presents some important aspects of the GaSb-based material growth, as well as the performance of photodiodes and TPV devices for the 0.9-2.55 μm spectral range. A reproducible technique has been developed for the production of high-speed and high-efficiency GaSb/GaInAsSb/GaAlAsSb photodiodes. The detectivity of the photodiodes, estimated from the measured noise level and monochromatic current sensitivity, in the spectral peak reaches D*(λmax, 1000, 1)=(0.8-1.0)×1011 W-1×cm×Hz1/2 at room temperature. Recently, we have adapted the technology for creating GaInAsSb (0.52-0.53 eV band gap) TPV devices. Based on the our results we believe a 0.5 eV band gap GaSb-based TPV cell with an open-circuit voltage well over 300 mV at current 2-3 A is a realistic near-term goal.
Ahmetoglu (Afrailov) Muhitdin
Andreev Igor A.
Erturk Kadir
Kunitsyna Ekaterina V.
Mikhailova Maya P.
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