Gain improvement for the THz p-Ge laser using neutron transmutation doped active crystal

Details Gain improvement for the THz p-Ge laser using neutron transmutation doped active crystal Gain improvement for the THz p-Ge laser using neutron transmutation doped active crystal

Sep 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5411..216f&link_type=abstract

Terahertz for Military and Security Applications II. Edited by Hwu, R. Jennifer; Woolard, Dwight L. Proceedings of the SPIE, Vol

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A far-infrared p-type germanium laser with active crystal prepared from ultra pure single-crystal Ge by neutron transmutation doping (NTD) is demonstrated. Calculations show that the high uniformity of Ga acceptor distribution achieved by NTD significantly improves average gain. The negative factor of stronger ionized impurity scattering due to high compensation in NTD Ge is shown to be unremarkable for the gain at moderate doping concentrations sufficient for laser operation. Experimentally, this first NTD laser is found to have lower current-density lasing threshold than the best of a number of melt-doped laser crystals studied for comparison.

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