GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers

Details GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers

Jul 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3698..603a&link_type=abstract

Proc. SPIE Vol. 3698, p. 603-611, Infrared Technology and Applications XXV, Bjorn F. Andresen; Marija Strojnik Scholl; Eds.

Statistics

Applications

Scientific paper

The submillimeter wavelength region is the last undeveloped spectral window in astronomy. The poor transmission of the atmosphere, and the lack of high-performance detectors prevent astronomical observations in this window. We have recently started a development of photoconductors utilizing shallow donor levels in GaAs semiconductors. The GaAs photoconductor promises to be a good candidate of a photo detector for use in future space mission for submillimeter astronomy. We have constructed facilities for liquid-phase epitaxy to obtain ultra-pure GaAs crystals which were absolutely necessary for a fabrication of photoconductors. The first experimental results are reported.

Affiliated with

Also associated with

No associations

Rating

GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and GaAs photoconductors for submillimeter astronomy: liquid phase epitaxial growth of GaAs layers will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1577657