Further evaluation of GaAs FETs for cryogenic readout

Details Further evaluation of GaAs FETs for cryogenic readout Further evaluation of GaAs FETs for cryogenic readout

Oct 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.1946..350k&link_type=abstract

Proc. SPIE Vol. 1946, p. 350-364, Infrared Detectors and Instrumentation, Albert M. Fowler; Ed.

Computer Science

1

Scientific paper

Low-frequency, low-noise, low-power cryogenic electronics to read out photodetectors is being investigated for the star-tracking telescope of the Gravity Probe B spacecraft. We report additional results in evaluating low-frequency '1/f' noise of commercial and non-commercial GaAs field-effect transistors (FETs) at room and liquid-helium temperatures. No correlation was found between noise at these two temperatures. For our dc biasing conditions, the lowest- noise non-commercial GaAs FETs give a typical value of K(subscript f) (equals A(subscript f) x gate area) approximately equals 2 X 10(superscript -22) V(superscript 2) (DOT) m(superscript 2); this corresponds to a noise voltage of approximately equals 80 nV/Hz(superscript 1/2) at 1 Hz for a gate area of 3 X 10(superscript 4) micrometers (superscript 2), only a factor of approximately equals 3 higher than the best Si JFETs of comparable gate area operated at their optimum temperature. RTSs (random telegraph signals) were observed for many GaAs MESFETs at 4 K, for gate areas up to approximately equals 5000 micrometers (superscript 2). We also examined low-frequency '1/f' noise in relation to FET materials, processing, and pinch- off voltage but the results were inconclusive.

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