Fluctuations in Avalanche Photodiode Structure

Details Fluctuations in Avalanche Photodiode Structure Fluctuations in Avalanche Photodiode Structure

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..201k&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 201-202 (2007).

Computer Science

Performance

3

Scintillation Detectors, Solid-State Detectors, Fluctuation Phenomena, Random Processes, Noise, And Brownian Motion

Scientific paper

The number of primary photo-electrons and the excess noise factor of the Avalanche photodiode (APD) are important parameters for the energy resolution of the crystal-APD system. In the present paper, the mean signal value and its fluctuations have been investigated for the well defined silicon Hamamatsu S8148 APD structure as a function of incident photons wavelength. Calculations were made with a Single Particle Monte Carlo simulation technique. Based on this work, the performance of the Hamamatsu S8148 APD as a photodetector for the PbWO4 scintillation light has been discussed.

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