First results of DEPFET-based active-pixel-sensor prototypes for the XEUS wide-field imager

Details First results of DEPFET-based active-pixel-sensor prototypes for the XEUS wide-field imager First results of DEPFET-based active-pixel-sensor prototypes for the XEUS wide-field imager

Sep 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5501...89t&link_type=abstract

High-Energy Detectors in Astronomy. Edited by Holland, Andrew D. Proceedings of the SPIE, Volume 5501, pp. 89-100 (2004).

Astronomy and Astrophysics

Astronomy

2

Scientific paper

The concept of an Active Pixel Sensor (APS) based on the integrated detector/amplifier structure DEPFET (DEpleted P-channel Field Effect Transistor) has been developed to cope with the challenging requirements of the XEUS Wide Field Imager. The DEPFET-APS combines high energy resolution, fast readout, and random accessible pixels allowing the application of flexible readout modes. First prototypes of DEPFET-based Active Pixel Sensors with a 64 x 64 pixel format and 75 µm x 75 µm pixel area have been produced at the MPI semiconductor laboratory. The APS is read out row by row, i.e. the pixel signals of one row are processed in parallel by a 64 channel CMOS amplifier/multiplexer chip of the CAMEX type. The addressing of one row of pixels for readout and reset is done by two control chips of the SWITCHER type fabricated in a high-voltage CMOS technology. The processing time for one row is of the order of a few micro-seconds. APS operation, the control and data acquisition system are described, and first experimental results are presented.

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