Fast estimation of pulse height spectra and extraction of transport parameters for semiconductor detectors

Details Fast estimation of pulse height spectra and extraction of transport parameters for semiconductor detectors Fast estimation of pulse height spectra and extraction of transport parameters for semiconductor detectors

Jul 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3446..159b&link_type=abstract

Proc. SPIE Vol. 3446, p. 159-168, Hard X-Ray and Gamma-Ray Detector Physics and Applications, F. Patrick Doty; Richard B. Hoover

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We discuss two simple, computationally efficient methods of estimating pulse height spectra for semiconductor detectors, one based on analytical techniques and the other involving Monte Carlo simulation. The former method gives rapid insight into the impact of major material parameters on detector performance, while the latter yields reasonable realistic spectra incorporating all major effects. We use both techniques in conjunction with a simulated annealing algorithm to extract electron and hole transport parameters from measured spectra.

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