Fabrication and characteristics of nonequilibrium VLWIR detectors with HgTe/CdTe superlattice active regions

Details Fabrication and characteristics of nonequilibrium VLWIR detectors with HgTe/CdTe superlattice active regions Fabrication and characteristics of nonequilibrium VLWIR detectors with HgTe/CdTe superlattice active regions

Dec 2003

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003spie.5209...75l&link_type=abstract

Materials for Infrared Detectors III. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volum

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P+-v-N+ structures with HgTe/CdTe superlattice absorber regions were grown by MBE to give cut-off wavelengths in the very long wavelength infrared (14 μm and longer) at temperatures below 80 K. The superlattice period of one sample was 98.3Å according to its x-ray diffraction profile, very close the intended 98.5Å for a 48.5Å HgTe/50.Å Hg0.05Cd0.95Te superlattice. The cut-off wavelengths of another sample were approximately 14 and 18 μm at 77 and 40K, respectively, as determined by optical absorption and spectral response measurements. A first batch of devices annealed at 150°C or 180°C for 1 hr after the deposition of 50Å thick gold films showed relatively low R0A values (approximately 0.3 ohm-cm2). This was interpreted to be due to the formation of a junction near the boundary of the superlattice and a high carrier concentration region of HgCdTe alloy. A second batch of devices was annealed at 120°C for 1 hr or 5 min. to decrease the gold diffusion depth. The electrical properties showed higher R0A values (approximately 8 ohm-cm2). The detectivities of the second batch devices at 77K were in the range of 108 to 1010 cmHz½/W and showed frequency dependence because the noise had frequency dependence. We observe very low knee frequencies (below 10Hz) in their noise spectra.

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