Experimental O VI dielectronic recombination rate coefficient and its enhancement by external electric fields

Details Experimental O VI dielectronic recombination rate coefficient and its enhancement by external electric fields Experimental O VI dielectronic recombination rate coefficient and its enhancement by external electric fields

Jul 2003

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003a%26a...405.1157b&link_type=abstract

Astronomy and Astrophysics, v.405, p.1157-1162 (2003)

Astronomy and Astrophysics

Astrophysics

8

Atomic Data, Atomic Processes, Line: Formation, Plasmas, Radiation Mechanisms: General

Scientific paper

The dielectronic recombination rate coefficient of O Vi ions has been measured at the heavy ion storage ring CRYRING. The electron energy range covered all dielectronic recombination resonances attached to 2s -> 2p (Delta n=0) core excitations. The rate coefficient in a plasma has been derived. It is compared to theoretical data. In addition the influence of external electric fields on the dielectronic recombination has been investigated. When increasing the electric field strength to 340 V/cm the experimental recombination rate coefficient is found to increase by up to a factor of 2.

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