Experimental investigation of the performance of GaAs/AlGaAs quantum well infrared photodetectors from the Industrial Microelectronics Center, Sweden

Details Experimental investigation of the performance of GaAs/AlGaAs quantum well infrared photodetectors from the Industrial Microelectronics Center, Sweden Experimental investigation of the performance of GaAs/AlGaAs quantum well infrared photodetectors from the Industrial Microelectronics Center, Sweden

Oct 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2274..209s&link_type=abstract

Proc. SPIE Vol. 2274, p. 209-218, Infrared Detectors: State of the Art II, Randolph E. Longshore; Ed.

Computer Science

Performance

Scientific paper

In this paper we present an experimental investigation of the performance of GaAs/AlGaAs multiple quantum well photodetectors. The purpose of this exercise was to independently evaluate and verify the responsivity of the GaAs/AlGaAs quantum well infrared photodetectors developed at the Industrial Microelectronics Center in Sweden. These devices use 2D gratings to couple radiation into the detectors and a cladding layer to enhance the coupling of radiation. The devices were of two types: those optimized for high detectivity, and those optimized for high quantum efficiency. The tests performed on these devices included measurement of optical responsivity vs. bias, spectral response, Detectivity (D(superscript *)), and measurement of cross-talk between pixels. Several interesting observations were made during the investigation and will be reported in the paper.

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