Evaluation of Si:As photoconductive detectors for infrared astronomy

Astronomy and Astrophysics – Astronomy

Scientific paper

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Background Noise, Electromagnetic Noise Measurement, Infrared Astronomy, Infrared Detectors, Photoconductivity, Silicon Radiation Detectors, Arsenic, Doped Crystals, Field Effect Transistors, Metal Oxide Semiconductors, Noise Spectra, Silicon Junctions

Scientific paper

As part of the development program for the Dutch experiment in the infrared astronomy satellite (IRAS), the performance of arsenic doped silicon photoconductive detectors, associated pre-amplifiers and spike-suppression circuitry has been evaluated. These detectors are part of the spectrometer in IRAS which will operate between 6.5 and 24 microns. Measurements of detector responsivity and system noise as a function of frequency, temperature, bias, etc., show that at 12.5 microns NEP = 10 to the -16th W/Hz to the 1/2 should be achieved. The results of an inhouse detector and preamplifier test program are summarized, and the test set up used for the performance evaluation is described.

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