Evaluation of irradiation-induced deep levels in Si

Details Evaluation of irradiation-induced deep levels in Si Evaluation of irradiation-induced deep levels in Si

Dec 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4140..267k&link_type=abstract

Proc. SPIE Vol. 4140, p. 267-273, X-Ray and Gamma-Ray Instrumentation for Astronomy XI, Kathryn A. Flanagan; Oswald H. Siegmund;

Astronomy and Astrophysics

Astronomy

1

Scientific paper

The front-illuminated CCD devices on board the Chandra X-ray observatory have been damaged by proton beam irradiation during radiation belt passage. The scattered ions such as protons created the traps in the buried n-channel of the CCD. The effect of proton radiation induced defects in Si is summarized. The generation and evolution of the irradiation defects is studied and its relationship with CCD performance is discussed. The methods for enhancement of dissociation of defects by biasing and/or light illumination are proposed to recover the performance of CCD.

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