Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout

Details Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout

Aug 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3354..247n&link_type=abstract

Proc. SPIE Vol. 3354, p. 247-252, Infrared Astronomical Instrumentation, Albert M. Fowler; Ed.

Computer Science

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4

Scientific paper

Low-noise and low-power cryogenic readout electronics are developed for a focal plane instrument of the IR Imaging Surveyor. We measured the static characteristics and the noise spectra of several types of silicon MOSFETs at the cryogenic temperature where silicon JFETs do not work well due to the carrier freeze-out. The 'kink' behavior of n- channel MOSFETs was observed below the carrier freeze-out temperature, but it was not obvious for the p-channel MOSFET. It was demonstrated the p-channel MOSFETs can be used for the cryogenic readout electronics of the IRIS's far-IR array with an acceptable performance. The amplifier integrated with these MOSFETs showed low-noise at 2K under a low power consumption of 1 (mu) W per MOSFET. We now design and evaluate several circuits that are fabricated by the CMOS process for cryogenic readout.

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