Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout

Computer Science – Performance

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

4

Scientific paper

Low-noise and low-power cryogenic readout electronics are developed for a focal plane instrument of the IR Imaging Surveyor. We measured the static characteristics and the noise spectra of several types of silicon MOSFETs at the cryogenic temperature where silicon JFETs do not work well due to the carrier freeze-out. The 'kink' behavior of n- channel MOSFETs was observed below the carrier freeze-out temperature, but it was not obvious for the p-channel MOSFET. It was demonstrated the p-channel MOSFETs can be used for the cryogenic readout electronics of the IRIS's far-IR array with an acceptable performance. The amplifier integrated with these MOSFETs showed low-noise at 2K under a low power consumption of 1 (mu) W per MOSFET. We now design and evaluate several circuits that are fabricated by the CMOS process for cryogenic readout.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Evaluation of charge-integrating amplifier with silicon MOSFETs for cryogenic readout will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-1539169

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.