Equivalent circuit of the Schottky-Barrier field-effect transistor at microwave frequencies

Details Equivalent circuit of the Schottky-Barrier field-effect transistor at microwave frequencies Equivalent circuit of the Schottky-Barrier field-effect transistor at microwave frequencies

Jun 1975

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975itmtt..23..499d&link_type=abstract

IEEE Transactions on Microwave Theory and Techniques, vol. MTT-23, June 1975, p. 499-501.

Mathematics

Representation Theory

Equivalent Circuits, Feedback Circuits, Field Effect Transistors, Microwave Circuits, Schottky Diodes, Transistor Circuits, Barrier Layers, Electrical Impedance, Electrical Properties, Gallium Arsenides, Metal Oxide Semiconductors

Scientific paper

Johnson's (1966) high-frequency representation theory for MOSFET's experimentally confirmed by Hopkins (1970) up to 1 GHz, is extended in this short paper for SBFET's and is found to substantially agree with data for 1-micron- and .5-micron-gate GaAs SBFET's up to 12 GHz. Regenerative-feedback conductance, not acounted for by conventional models, is seen to be present in SBFET's at microwave frequencies.

Affiliated with

Also associated with

No associations

Rating

Equivalent circuit of the Schottky-Barrier field-effect transistor at microwave frequencies does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Equivalent circuit of the Schottky-Barrier field-effect transistor at microwave frequencies, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Equivalent circuit of the Schottky-Barrier field-effect transistor at microwave frequencies will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-750292