Electrostatically-Driven Resonator on Soi with Improved Temperature Stability

Details Electrostatically-Driven Resonator on Soi with Improved Temperature Stability Electrostatically-Driven Resonator on Soi with Improved Temperature Stability

2007-11-21

arxiv.org/abs/0711.3288v1

Dans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2006, Stresa, Lago Maggiore : Italie (2006)

Computer Science

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Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions)

Scientific paper

This paper deals with a single-crystal-silicon (SCS) MEMS resonator with improved temperature stability. While simulations have shown that the temperature coefficient of resonant frequency can be down to 1 ppm/degrees C, preliminary measurements on non-optimised structures gave evidence of a temperature coefficient of 29 ppm/degrees C. Design, optimisation, experimental results with post process simulation and prospective work are presented.

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