Electron-phonon relaxation in hot-electron detectors below 1 K

Details Electron-phonon relaxation in hot-electron detectors below 1 K Electron-phonon relaxation in hot-electron detectors below 1 K

Feb 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002aipc..605...75k&link_type=abstract

LOW TEMPERATURE DETECTORS: Ninth International Workshop on Low Temperature Detectors. AIP Conference Proceedings, Volume 605, p

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Charge Carriers: Generation, Recombination, Lifetime, Trapping, Mean Free Paths, Thermoelectromagnetic And Other Devices

Scientific paper

Recently proposed submillimeter hot-electron direct detectors rely on a weak thermal coupling between electrons and phonons. According to the theory, this should occur in impure films. So far, the experimental situation has been somewhat confusing. A number of works have shown a cubic temperature dependence of the electron-phonon relaxation rate below 1 K. In contrast to the traditional explanation, we show that it was not a clean limit behavior but rather an intermediate temperature asymptotics. In this case, an electron scattering from transversal phonons mediated by vibrating impurities/boundaries dominates. In our recent experiments we reached the dirty limit predicted by the theory in Hf and Ti films. A measured electron-phonon relaxation time followed the T-4 dependence and was a record-long (25 ms) at 40 mK. .

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