Electron impact excitation rates for fine-structure transitions in NE V and SI IX - an R-matrix approach

Details Electron impact excitation rates for fine-structure transitions in NE V and SI IX - an R-matrix approach Electron impact excitation rates for fine-structure transitions in NE V and SI IX - an R-matrix approach

Jan 1984

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1984apjs...54....1a&link_type=abstract

Astrophysical Journal Supplement Series (ISSN 0067-0049), vol. 54, Jan. 1984, p. 1-15. Research supported by the Science and Eng

Astronomy and Astrophysics

Astrophysics

29

Atomic Excitations, Electron Impact, Electron Transitions, Fine Structure, Neon, Silicon, Solar Atmosphere, Atomic Collisions, Chromosphere, Configuration Interaction, Electron Energy, Forbidden Transitions, Solar Corona, Space Plasmas, Tables (Data)

Scientific paper

Collision strengths for electron impact excitation of fine-structure transitions in Ne V and Si IX have been calculated in a wide energy range using the R-matrix method. Configuration interaction wave functions have been employed in the calculations, and all partial waves with L ≤ 9 have been included. The collision strengths show a complicated resonance structure in the threshold energy region for almost all the transitions. The entire collision strength spectrum has been averaged over a Maxwellian distribution of electron velocities, and the results so obtained have been tabulated at temperatures below 1×106K for Ne V and below 2.5×106K for Si IX.

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