Statistics – Applications
Scientific paper
Apr 1999
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..211s&link_type=abstract
Proc. SPIE Vol. 3629, p. 211-222, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.
Statistics
Applications
Scientific paper
Ultraviolet photodetectors have many military and commercial applications. However, for many of these applications, the photodetectors must be solar blind. This means that the photodetectors must have a cutoff wavelength of less than about 270 nm. Semiconductor based devices would then need energy gaps of over 4.6 eV. In the Al(subscript x)Ga(subscript 1-x)N system, the aluminum mole fraction, x, required is over 40%. As the energy gap is increased, doping becomes much more difficult, especially p-type doping. This report is a study of the electrical properties of Al(subscript x)Ga(subscript 1-x)N to enable better control of the doping. Magnesium doped p-type Al(subscript x)Ga(subscript 1- x)N has been studied using high-temperature Hall effect measurements. The acceptor ionization energy has been found to increase substantially with the aluminum content. Short-period superlattices consisting of alternating layers of GaN:Mg and AlGaN:Mg were also grown by low-pressure organometallic vapor phase epitaxy. The electrical properties of these superlattices were measured as a function of temperature and compared to conventional AlGaN:Mg layers. It is shown that the optical absorption edge can be shifted to shorter wavelengths while lowering the acceptor ionization energy by using short- period superlattice structures instead of bulk-like AlGaN:Mg. Silicon doped n-type films have also been studied.
Ahoujja M.
Kung Patrick
Mitchel W. C.
Razeghi Manijeh
Saxler Adam W.
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