Efficient optical sources in silicon using dislocation engineering

Details Efficient optical sources in silicon using dislocation engineering Efficient optical sources in silicon using dislocation engineering

Sep 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4823..155g&link_type=abstract

Photonics for Space Environments VIII. Edited by Taylor, Edward W. Proceedings of the SPIE, Volume 4823, pp. 155-161 (2002).

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Scientific paper

In this paper we describe a new approach to the manufacture of Si based optical emitters. Dislocation engineering, using entirely ULSI compatible technology has been shown to be a viable route to the production of efficient LED's operating at room temperature. External quantum efficiencies of ~ 10-4 have been realised for un-packaged devices operating at room temperature. This approach has also been shown to yield great benefits in the control of thermal quenching for other material systems, such as the FeSi2, where room temperature operational devices based at 1.5um have been demonstrated

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