Computer Science – Performance
Scientific paper
Jun 1993
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993itns...40..288m&link_type=abstract
IEEE Transactions on Nuclear Science (ISSN 0018-9499), vol. 40, no. 3, p. 288-294
Computer Science
Performance
4
Aerospace Environments, Charge Coupled Devices, Environment Effects, Environmental Tests, Metal Oxide Semiconductors, Noise Spectra, Radiation Damage, Transistors, Doped Crystals, Flux Density, Noise Measurement, Space Environment Simulation, Threshold Gates
Scientific paper
We have subjected lightly doped drain (LDD) MOS transistors to proton radiation damage representative of the damage they would receive on a typical orbital space telescope mission. We measured the noise spectral density at a function of gate voltage, temperature and total radiation dose. These data were then used to model the resultant read noise lower limit for that transistor if used as the charge conversion, output stage of a charge coupled device (CCD) imaging array detector. There is very clear excess noise contributed to the CCD output as a function of radiation. It is possible to select combinations of temperature, CCD duel correlated sample (DCS) time constant and gate voltage which minimize the performance degradation due to this excess noise.
Deen Mohamed J.
Linzhuang Gao
Murowinski Richard G.
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