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Scientific paper
Dec 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002esasp.507..377r&link_type=abstract
Proceedings of the European Space Components Conference, ESCCON 2002, 24-27 September 2002, Toulouse, France. Compiled by R.A. H
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1
Scientific paper
In this paper experimental results on radiation effects on a BICMOS high-speed standard commercial technology, manufactured by ST-Microelectronics, are reported. Bipolar transistors were irradiated by neutrons, ions, or by both of them. Fast neutrons, as well as other types of particles, produce defects, mainly by displacing silicon atoms from their lattice positions to interstitial locations, i.e. generating vacancy-interstitial pairs, the so-called Frenkel pairs. Defects introduce trapping energy states which degrade the common emitter current gain . The gain degradation has bee investigated for collector current, Ic, between 1 μA and1 mA. It was found a linear dependence of Δ(1/β) = 1/β- 1/βi(where βi and β are the gain after and before tirradiation) as a function of the concentration of Frenkel pairs. The bipolar transistors made on this technology have shown to be particularly radiation resistant. For instance, npn small area transistors have a gain variation (-i)/, lower than 10% for doses of about 0.5 MRad and collector currents of 1 μA, well suited for low power consumption space application
Colder A.
Croitoru N.
de Marchi M.
Fallica G.
Favalli A.
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