Effects of interface and bulk optical phonons on polarons in a quantum well

Details Effects of interface and bulk optical phonons on polarons in a quantum well Effects of interface and bulk optical phonons on polarons in a quantum well

Jan 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994phrvb..49.1796z&link_type=abstract

Physical Review B (Condensed Matter), Volume 49, Issue 3, January 15, 1994, pp.1796-1801

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35

Other Semiconductor-To-Semiconductor Contacts, P-N Junctions, And Heterojunctions, Phonon-Electron And Phonon-Phonon Interactions

Scientific paper

The properties of a confined electron interacting with both the confined longitudinal optical (LO) and interface optical (IO) phonons in a quantum well (QW) are investigated. By using a modified Lee-Low-Pines variational method, an analytical expression for the polaron ground-state energy is obtained. Numerical calculation is performed for a GaAs/AlAs QW as a typical case. The results show that only two symmetric IO-phonon modes as well as the confined LO-phonon mode contribute to the energies of the polaron. It is also found that one of the symmetric IO-phonon modes is more important, its contribution to the energies is much larger than the others when the QW width is smaller than the polaron radius.

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