Effective collision strengths for SI III

Details Effective collision strengths for SI III Effective collision strengths for SI III

Nov 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989mnras.241..209d&link_type=abstract

Monthly Notices of the Royal Astronomical Society (ISSN 0035-8711), vol. 241, Nov. 15, 1989, p. 209-214.

Astronomy and Astrophysics

Astronomy

26

Atomic Collisions, Atomic Excitations, Electron Impact, Silicon, Electron Energy, Electron States, Electron Transitions, Fine Structure

Scientific paper

Collision strengths are presented for electron impact excitation among the 12 lowest LS states of Si III calculated using the R-matrix method. These collision strengths are used to deduce effective collision strengths, adopting a Maxwellian electron energy distribution. Polynomial fits of the effective collision strength are tabulated for all transitions between the fine structure levels for electron temperatures (Tc) between log Tc = 3.8 and 5.2. For selected transitions, information on the collision strength near threshold is also tabulated.

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