Computer Science
Scientific paper
Sep 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1685..268w&link_type=abstract
Proc. SPIE Vol. 1685, p. 268-275, Infrared Detectors and Focal Plane Arrays II, Eustace L. Dereniak; Robert E. Sampson; Eds.
Computer Science
Scientific paper
The temperature dependence of minority-carrier lifetime of n-Hg(subscript 1-x)Cd(subscript x)Te with various composition is investigated both theoretically and experimentally in the whole range between 300 K and 77 K. We use the technique of photoconductive decay to measure the minority-carrier recombination lifetime. The lifetime variations with temperature are explained using a combination of band-to-band and Shockley-Read recombination process. It shows that the lifetime variations with temperature cannot be explained by direct band-to-band recombination alone. The assumption that recombination also occurs via Shockley-Read type recombination centers enables us to calculate theoretically values of the lifetime in good agreement with the experimental results. The results show that the Shockley-Read recombination is the lifetime-limiting mechanism in the operating temperature below 200 K, and the Auger recombination is the lifetime-limiting mechanism in the range of the higher temperature.
Fang Jiaxiong
Hu Xierong
Li Yanjin
Wan Yong
Xu Guosen
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