Development of the nano-HEB array for low-background far-IR applications

Details Development of the nano-HEB array for low-background far-IR applications Development of the nano-HEB array for low-background far-IR applications

Jul 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010spie.7741e..34k&link_type=abstract

Millimeter, Submillimeter, and Far-Infrared Detectors and Instrumentation for Astronomy V. Edited by Holland, Wayne S.; Zmuidzin

Astronomy and Astrophysics

Astronomy

2

Scientific paper

We present an overview of the recent progress made in the development of a far-IR array of ultrasensitive hot-electron nanobolometers (nano-HEB) made from thin titanium (Ti) films. We studied electrical noise, signal and noise bandwidth, single-photon detection, optical noise equivalent power (NEP), and a microwave SQUID (MSQUID) based frequency domain multiplexing (FDM) scheme. The obtained results demonstrate the very low electrical NEP down to 1.5×10-20 W/Hz1/2 at 50 mK determined by the dominating phonon noise. The NEP increases with temperature as ~ T3 reaching ~ 10-17 W/Hz1/2 at the device critical temperature TC = 330-360 mK. Optical NEP = 8.6×10-18 W/Hz1/2 at 357 mK and 1.4×10-18 W/Hz1/2 at 100 mK respectively, agree with thermal and electrical data. The optical coupling efficiency provided by a planar antenna was greater than 50%. Single 8-μm photons have been detected for the first time using a nano-HEB operating at 50-200 mK thus demonstrating a potential of these detectors for future photon-counting applications in mid-IR and far-IR. In order to accommodate the relatively high detector speed (~ μs at 300 mK, ~ 100 μs at 100 mK), an MSQUID based FDM multiplexed readout with GHz carrier frequencies has been built. Both the readout noise ~ 2 pA/Hz1/2 and the bandwidth > 150 kHz are suitable for nano-HEB detectors.

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