Development of the GaAs-based THz Photoconductor and Balloon-borne Experiment Module TG-ZERO

Details Development of the GaAs-based THz Photoconductor and Balloon-borne Experiment Module TG-ZERO Development of the GaAs-based THz Photoconductor and Balloon-borne Experiment Module TG-ZERO

Aug 2009

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009aipc.1158..399w&link_type=abstract

EXOPLANETS AND DISKS: THEIR FORMATION AND DIVERSITY: Proceedings of the International Conference. AIP Conference Proceedings, V

Astronomy and Astrophysics

Astronomy

Ground-Based Ultraviolet, Optical And Infrared Telescopes, Photometric, Polarimetric, And Spectroscopic Instrumentation, Astrometric And Interferometric Instruments

Scientific paper

The far-infrared (around 1 terahertz (THz)) extrinsic photoconductor is fabricated by a LPE-grown GaAs semiconductor. This GaAs detector can detect longer wavelength photons than the stressed Ge:Ga conventionally used for astronomical infrared observation. We applied the liquid phase epitaxy to obtain a suitable purity of GaAs crystals, and the test N-GaAs photoconductor device shows spectroscopic response over a wide wavelength range of 150-300 micron. The best sample shows 30 A/W of responsivity and 10-16 W/Hz0.5 of NEP is expected at 295 micron of wavelength and T = 1.6 K. In addition, we constructed the terahertz photometer module (TG-ZERO) using our N-GaAs photoconductors. TG-ZERO has four channel bands with N-GaAs and Ge:Ga photoconductors. The development process, the result of experiments, and the basic specifications of TG-ZERO are all reported in this paper.

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