Development of Si:Ga/DVR 128 x 192 element arrays for 8- to 14-um observation

Details Development of Si:Ga/DVR 128 x 192 element arrays for 8- to 14-um observation Development of Si:Ga/DVR 128 x 192 element arrays for 8- to 14-um observation

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2552..785r&link_type=abstract

Proc. SPIE Vol. 2552, p. 785-790, Infrared Technology XXI, Bjorn F. Andresen; Marija S. Scholl; Eds.

Computer Science

Performance

Scientific paper

New gallium-doped silicon 128 by 192 element arrays have been achieved at CEA-LETI-LIR (Infrared Laboratory) for imaging in the 8 - 14 micrometer spectral range. This program is in keeping with the previous detector development for the ISOCAM camera (32 by 32 element arrays) and for ground-based observation (64 by 64 element arrays). The main features of the new detectors are: a pitch of 75 micrometer which leads to 10 by 15 mm2 chip dimensions, two selectable storage capacitors (respectively 0.1 and 0.5 pF), a DVR readout circuit achieved in an NMOS silicon line with 1.5 micrometer design rules. The main electro- optical performances are the following: a peak responsivity of 4.0 A/W, a noise of 58 fA rms over the 0.1 - 128 Hz spectral range which is very close to the BLIP noise, and a corresponding noise equivalent power of 1.4 10-14 W.

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