Mathematics
Scientific paper
Mar 2003
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003spie.4850..910w&link_type=abstract
IR Space Telescopes and Instruments. Edited by John C. Mather . Proceedings of the SPIE, Volume 4850, pp. 910-918 (2003).
Mathematics
Scientific paper
Cooled detectors for IR, visible, UV and X-rays often require a preamplifier that can operate at deep cryogenic temperature, down to the liquid-helium range. Preamplifiers based on available silicon or gallium arsenide transistors have not been entirely satisfactory. With this in mind, we have been developing junction field-effect transistors (JFETs) based on germanium. Our objective has been to achieve stable dc characteristics and very low noise down to as low a cryogenic as possible. We have obtained good dc characteristics down to liquid-helium temperature and low noise down to ≍30 K with Ge JEFTs. Between approximately 30 and 80 K, low-frequency gate-referred noise voltage is ≍30-60 nV/rtHz at 1 Hz, decreasing to <2 nV/rtHz above ≍1 kHz for 40 μm by 1560 μm gate n-channel Ge JFETs with drain current of 330 μA and dissipating approximately 400 μW. For lower and higher drain current the "1/f" noise remains approximately the same, but the white noise increases or decreases as expected. We are continuing development with the goal of extending the same low noise characteristics down to 4K.
Babu Sachidananda R.
Camin David V.
Grassi Valerio
Jhabvala Murzy D.
Kirschman Randall K.
No associations
LandOfFree
Development of Ge JFETs for deep-cryogenic preamplifiers does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Development of Ge JFETs for deep-cryogenic preamplifiers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Development of Ge JFETs for deep-cryogenic preamplifiers will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1170329