Astronomy and Astrophysics – Astronomy
Scientific paper
Aug 1998
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3354..253o&link_type=abstract
Proc. SPIE Vol. 3354, p. 253-260, Infrared Astronomical Instrumentation, Albert M. Fowler; Ed.
Astronomy and Astrophysics
Astronomy
Scientific paper
GaAs JFET with various gate sizes, which ranges from 0.5 to 200 micrometers in gate length and from 2 to 200 micrometers in gate width, are fabricated and their DC characteristics and low- frequency noise spectra are measured at low temperatures in order to develop cryogenic electronic circuits for a far-IR detector array on board a satellite such as the Japanese IR satellite. We obtained the following results from the noise measurements: (1) Noise spectra of GaAs JFETs are dominated by a 1/f noise and include some generation-recombination noises in low-frequencies. (2) The 1/f noise voltage is found to remarkably depend on both the gate length and the drain-source voltage, but the gate width and the gate-source voltage have not almost concern with the 1/f noise voltage. Therefore, we suppose that the electric field in the channel of the GaAs JFET mainly contributes to the 1/f noise. By using these characteristics, the GaAs JFET having very low power dissipation and very low noise will be designed for cryogenic readout circuits at low temperatures.
Akiba Makoto
Hiromoto Norihisa
Hosako Iwao
Okumura Ken'ichi
Yamashita-Yui Yukari
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