Development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

Details Development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers Development of doped-germanium photoconductors for astronomical observations at wavelengths from 30 to 120 micrometers

Oct 1976

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1976sbrc.rept.....b&link_type=abstract

Final Technical Report, 1 Oct. 1976 - 31 Mar. 1977 Santa Barbara Research Center, Goleta, CA.

Astronomy and Astrophysics

Astronomy

Crystal Growth, Doped Crystals, Germanium Diodes, Semiconductors (Materials), Infrared Astronomy, Infrared Detectors, Semiconductor Devices

Scientific paper

Technology was developed for production of doped-germanium detectors which have optimized performance in the 30- to 120-micrometer wavelength range and are capable of achieving the objectives of the Infrared Astronomy Satellite space mission. The work of this phase was divided into the following major tasks: (1) growth of Ge:Ga crystals from high-purity starting material with Ga concentrations different from that previously produced, and development of a zone leveling method to produce a uniform Ga doping concentration; (2) growth of uncompensated Ge:Be crystals from high-purity starting material with a range of Be concentrations between 10 to the 14th power and 10 to the 16th power atoms/cubic cm; (3) evaluation of crystals by means of Hall effect and resistance measurements as a function of temperature; (4) fabrication and test of detectors made from both Ge:Be and Ge:Ga crystals to determine the relative performance between different crystals. Correlation of detector test data with material evaluation data and analysis of how to further optimize detector performance.

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