Development of cryogenic readout electronics using fully-depleted-silicon-on-insulator CMOS process for future space borne far-infrared image sensors

Details Development of cryogenic readout electronics using fully-depleted-silicon-on-insulator CMOS process for future space borne far-infrared image sensors Development of cryogenic readout electronics using fully-depleted-silicon-on-insulator CMOS process for future space borne far-infrared image sensors

Dec 2009

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009aipc.1185..286n&link_type=abstract

THE THIRTEENTH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE DETECTORS-LTD13. AIP Conference Proceedings, Volume 1185, pp. 286-289

Astronomy and Astrophysics

Astronomy

X-Ray Astronomy, Cryogenics, Bolometers, Astronomical Catalogs, Atlases, Sky Surveys, Databases, Retrieval Systems, Archives, Etc., Cryogenics, Refrigerators, Low-Temperature Detectors, And Other Low-Temperature Equipment, Bolometers, Infrared, Submillimeter Wave, Microwave, And Radiowave Receivers And Detectors

Scientific paper

We measured the static characteristics and noise spectra of FD-SOI-CMOS at liquid helium temperature where many bulk-CMOS transistors suffer from anomalous behaviors on the current-voltage curves such as kink phenomena. The test results showed that the static characteristics depend on the layouts of the FD-SOI-CMOS transistor. While a body floating FD-SOI-CMOS transistor showed strong anomalous effects on the I-V curves, body-tied and ST ones showed much better static characteristics than the body floating one. Using the characteristics derived from the FET measurements, we show that a low power and high gain preamplifier suitable for far-infrared detectors can be designed.

Affiliated with

Also associated with

No associations

Rating

Development of cryogenic readout electronics using fully-depleted-silicon-on-insulator CMOS process for future space borne far-infrared image sensors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Development of cryogenic readout electronics using fully-depleted-silicon-on-insulator CMOS process for future space borne far-infrared image sensors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Development of cryogenic readout electronics using fully-depleted-silicon-on-insulator CMOS process for future space borne far-infrared image sensors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1882049