Development of a GaAs-based BIB detector for sub-mm wavelengths

Details Development of a GaAs-based BIB detector for sub-mm wavelengths Development of a GaAs-based BIB detector for sub-mm wavelengths

Jul 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006spie.6275e..58r&link_type=abstract

Millimeter and Submillimeter Detectors and Instrumentation for Astronomy III. Edited by Zmuidzinas, Jonas; Holland, Wayne S.; W

Astronomy and Astrophysics

Astronomy

2

Scientific paper

Gallium arsenide is a promising material for large photoconductor arrays to be operated at submm wavelengths, where currently small stressed germanium arrays are used. The smaller binding energy of shallow donors in GaAs compared to Ge results in response at longer wavelengths without having to apply uniaxial stress. Use of n-type GaAs will greatly simplify the production of detector arrays and therefore allow much larger numbers of pixels. We have grown n-doped GaAs epitaxial films and demonstrated high absorption coefficients at wavelengths exceeding 300 μm. Combined with a high purity GaAs layer, a blocked impurity band (BIB) detector can be formed in order to simultaneously achieve efficient absorption and low dark currents. Recent progress in GaAs epitaxy technology allows production of such multilayer devices in wafer size. We are presenting the characterization results of our preliminary GaAs BIB structures.

Affiliated with

Also associated with

No associations

Rating

Development of a GaAs-based BIB detector for sub-mm wavelengths does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Development of a GaAs-based BIB detector for sub-mm wavelengths, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Development of a GaAs-based BIB detector for sub-mm wavelengths will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1893824