Development of 30 micrometers extrinsic silicon multiplexed infrared deterctor array

Details Development of 30 micrometers extrinsic silicon multiplexed infrared deterctor array Development of 30 micrometers extrinsic silicon multiplexed infrared deterctor array

Jun 1986

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986sbrc.rept.....o&link_type=abstract

Final Report, Mar. 1985 - Jun. 1986 Santa Barbara Research Center, Goleta, CA.

Computer Science

Performance

Arrays, Fabrication, Infrared Detectors, Multiplexing, Performance Tests, Silicon, Antimony, Doped Crystals, Field Effect Transistors, Infrared Astronomy, Pixels

Scientific paper

Two hybrid infrared (IR) detector arrays of antimony-doped silicon (Si:Sb) were produced and tested to evaluate their potential for use in low-background IR astronomy applications. The format of the arrays is 58 x 62 elements, with 76 micron-square pixels. A random-access, switched metal-oxide semiconductor field effect transistor (MOSFET) silicon multiplexer is used to read out the array elements. Reduced-background tests of signal, noise, and noise equivalent power were conducted over the temperature range 3.2 to 12 K. The arrays were found to have good sensitivity and good uniformity.

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