Determination of the composition of a complex semiconductor compound from its thermal emission spectrum

Details Determination of the composition of a complex semiconductor compound from its thermal emission spectrum Determination of the composition of a complex semiconductor compound from its thermal emission spectrum

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554..281b&link_type=abstract

Proc. SPIE Vol. 2554, p. 281-283, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan

Computer Science

Scientific paper

The possibility of use of the thermal emission of a complex
semiconductor compound for determination of its forbidden band gap and,
hence, the composition is examined. Measurements were carried out on
p-type Hg(subscript 1-x)Cd(subscript x)Te films with 0.197

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