Design, fabrication, and performance of a whiskerless Schottky diode for millimeter and submillimeter wave applications

Details Design, fabrication, and performance of a whiskerless Schottky diode for millimeter and submillimeter wave applications Design, fabrication, and performance of a whiskerless Schottky diode for millimeter and submillimeter wave applications

May 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985ieee.proc..111m&link_type=abstract

IN: SOUTHEASTCON '85; Proceedings of the Conference, Raleigh, NC, March 31-April 3, 1985 (A86-43826 21-32). New York, Institute

Computer Science

Performance

Fabrication, Millimeter Waves, Performance Tests, Schottky Diodes, Submillimeter Waves, Whiskers (Crystals), Capacitance, Epitaxy, Frequency Response, Radio Astronomy

Scientific paper

Design considerations, fabrication techniques, and performance predictions are presented for a planar whiskerless Schottky diode to be used (in radio astronomy applications) at 100-300 GHz. The anode and ohmic contacts are on the same side of the device, and proton bombardment is used to establish the divided surface (by making some regions of the GaAs wafer semiinsulating) prior to definition of a B-doped SiO2 finger, ohmic contacting, anode formation, and anode contact metallization (all using photolithographic techniques). The contributions of parasitic elements are calculated for a device with a 3.5-micron-deep n(+) layer doped at 2 x 10 to the 18th/cu cm, a 250-nm-thick epitaxial layer doped at 5 x 10 to the 16th/cu cm, and a 1-micron-radius anode (providing zero-bias junction capacitance 7 fE). It is predicted that such a device would have total series resistance 12.58 ohm and total shunt capacitance 1.37 fF, compared with 14.27 ohm and 0.93 fF for the corresponding whiskered device.

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