Design, fabrication, and delivery of a charge injection device as a stellar tracking device

Details Design, fabrication, and delivery of a charge injection device as a stellar tracking device Design, fabrication, and delivery of a charge injection device as a stellar tracking device

Apr 1979

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1979gec..rept.....b&link_type=abstract

Final Technical Report, 28 Nov. 1977 - 28 Nov. 1978 General Electric Co., Schenectady, NY.

Computer Science

Performance

Charge Injection Devices, Fabrication, Imaging Techniques, Star Trackers, Systems Engineering, Arrays, Circuit Diagrams, Noise Measurement, Performance, Silicon, Temperature Effects

Scientific paper

Six 128 x 128 CID imagers fabricated on bulk silicon and with thin polysilicon upper-level electrodes were tested in a star tracking mode. Noise and spectral response were measured as a function of temperature over the range of +25 C to -40 C. Noise at 0 C and below was less than 40 rms carriers/pixel for all devices at an effective noise bandwidth of 150 Hz. Quantum yield for all devices averaged 40% from 0.4 to 1.0 microns with no measurable temperature dependence. Extrapolating from these performance parameters to those of a large (400 x 400) array and accounting for design and processing improvements, indicates that the larger array would show a further improvement in noise performance -- on the order of 25 carriers. A preliminary evaluation of the projected performance of the 400 x 400 array and a representative set of star sensor requirements indicates that the CID has excellent potential as a stellar tracking device.

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