Design and performance of blocked-impurity-band detector focal plane arrays

Computer Science – Performance

Scientific paper

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Arrays, Field Effect Transistors, Focal Plane Devices, Infrared Detectors, Multiplexing, Quantum Efficiency, Capacitors, Metal Oxide Semiconductors, Noise Measurement, Performance Tests, Silicon, Transistor Circuits, Volt-Ampere Characteristics

Scientific paper

The design, fabrication, and performance of hybrid focal-plane arrays for the long-wavelength IR region are discussed. The arrays are based on Si:As back-illuminated blocked-impurity-band (BIBIB) detectors and switched-MOSFET multiplexers to provide anomaly-free cryogenic operation. The fundamental principles of hybrid arrays and BIBIB detection are reviewed; the development of the multiplexer is described in detail; and the results of performance tests on a 500-element array are presented. Diagrams, drawings, graphs, photographs, and tables of numerical data are provided. Performance parameters include operating temperature 4-12 K, integration time from 62.5 microsec to 300 sec, source-follower gain 0.7, node capacitance 400-460 fF, rms read noise at 3-kHz bandwidth 26 microV (output) and 110 electrons (input), maximum charge capacity greater than 2 x 10 to the 6th electrons, and power dissipation (in 1 msec integration time) less than 5 microW/pixel.

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