Design and assembly of a stressed Ge:Ga photoconductor array for AIRES

Details Design and assembly of a stressed Ge:Ga photoconductor array for AIRES Design and assembly of a stressed Ge:Ga photoconductor array for AIRES

Jun 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4014..148r&link_type=abstract

Proc. SPIE Vol. 4014, p. 148-155, Airborne Telescope Systems, Ramsey K. Melugin; Hans-Peter Roeser; Eds.

Computer Science

Scientific paper

In this paper we present the considerations for design and assembly of a stressed gallium doped germanium photoconductor array for the Airborne InfraRed Echelle Spectrometer on SOFIA. This 8 X 12 element array will cover the wavelength range from 125 to 210 micrometers . The considerations cover the aspects of the mechanical design for stressing the detectors in a uniform way, assembly of the components, contacting them electrically with minimized stray capacitance, and the layout of the light collecting cone assembly.

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