Computer Science – Performance
Scientific paper
Dec 1990
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990itns...37.2042s&link_type=abstract
(IEEE, DNA, JPL, et al., Annual Conference on Nuclear and Space Radiation Effects, 27th, Reno, NV, July 16-20, 1990) IEEE Transa
Computer Science
Performance
5
Electrical Properties, Gamma Rays, Mercury Cadmium Tellurides, Photometers, Radiation Damage, Capacitance-Voltage Characteristics, Infrared Detectors, P-Type Semiconductors, Photodiodes, Quantum Efficiency, Volt-Ampere Characteristics
Scientific paper
Planar n(+)p Hg(1-x)Cd(x)Te (x = 0.23) photodiodes passivated with ZnS were irradiated by a Co60 gamma source. A strong increase in the reverse dark current was observed for doses above 0.3 Mrad(air). A similar effect is found by exposing the photodiodes to UV illumination from a high-pressure mercury lamp. By filtering the UV light it is shown that the degradation in the performance of the photodiodes is caused by the light or radiation absorbed in the ZnS layer above the implanted n-type region. C-V measurements of irradiated MIS devices showed a significant increase in the fast surface state density. Galvanomagnetic and lifetime measurements made on irradiated p-type HgCdTe layer showed no significant changes in the bulk transport parameters. Based on these findings, a model for the degradation mechanism is proposed.
Eger D.
Goshen R.
Mainzer Nili
Sarusi G.
Zemel A.
No associations
LandOfFree
Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Degradation mechanisms of gamma irradiated LWIR HgCdTe photovoltaic detectors will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1631306