Crystal Growth of a Binary Semiconductor of Uniform Composition

Details Crystal Growth of a Binary Semiconductor of Uniform Composition Crystal Growth of a Binary Semiconductor of Uniform Composition

Jan 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999adspr..24.1241m&link_type=abstract

Advances in Space Research, Volume 24, Issue 10, p. 1241-1244.

Computer Science

Scientific paper

We proposed a new method of growing a binary semiconductor crystal which has a uniform composition and investigated the validity of the method numerically. We developed a calculation method of InAs-GaAs binary crystal growth and checked the effect of the cooling rate and the temperature gradient on the generation of constitutional supercooling and the compositional uniformity of the grown crystal. It has been found that a crystal of a uniform composition can be grown by setting a positive concentration gradient of InAs in the direction of the growing crystal in the solution initially, which we call the ``One-directional growth method with a Nonuniform Concentration Gradient in the solution (NCG method)''. A map of constitutional supercooling, that is the dependence of the degree of constitutional supercooling on the initial temperature gradient and the cooling rate is produced and the optimal conditions for the production of uniform crystals are discussed

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