Cryogenic MOST for focal plane readout electronics

Details Cryogenic MOST for focal plane readout electronics Cryogenic MOST for focal plane readout electronics

Sep 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3360..122b&link_type=abstract

Proc. SPIE Vol. 3360, p. 122-127, Infrared Readout Electronics IV, Bedabrata Pain; Terrence S. Lomheim; Eds.

Computer Science

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Scientific paper

At temperatures below 20K conventional MOS transistors continue to work, but excessive noise and current-voltage anomalies such as kink effect and hysteresis appear on their output characteristics because of carrier freeze-out in silicon. A cryogenic MOS transistor was proposed to prevent the anomalies. The paper describes the cryogenic transistor structure, its performance and the result of its application in a 64 by 1 CMOS multiplexer.

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