Cryogenic measurements of aerojet GaAs n-JFETs

Details Cryogenic measurements of aerojet GaAs n-JFETs Cryogenic measurements of aerojet GaAs n-JFETs

Jul 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1684...93g&link_type=abstract

In: Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992 (A93-53076 23-33), p. 93-109.

Computer Science

Performance

1

Cryogenic Temperature, Field Effect Transistors, Gates (Circuits), Infrared Detectors, Thermal Noise, Fabrication, Gallium Arsenides, Molecular Beam Epitaxy, Photometers

Scientific paper

The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the lowest noise readings possible and 3) with an extrinsic silicon photodetector at various detector bias voltages, to determine optimum operating conditions. Current noise characterization was measured at the drain in the temperature range 300 to 77 K. Device design and MBE processing are described. Static I-V characterization is done at 300, 77 and 6 K. The measurements indicate that the Aerojet GaAs n-JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered as a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to that of Si MOSFETs operating at liquid helium temperatures, and is equal to the best Si n-JFETs operating at 300 K.

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