Computer Science – Performance
Scientific paper
Jun 1994
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2226...14c&link_type=abstract
Proc. SPIE Vol. 2226, p. 14-20, Infrared Readout Electronics II, Eric R. Fossum; Ed.
Computer Science
Performance
Scientific paper
Gallium arsenide junction field-effect transistors (GaAs JFETs) are promising for deep cryogenic (< 10 K) readout electronics applications. This paper presents the structure and fabrication of GaAs (JFETs) and their performance at 4 K. It is shown that these JFETs operate normally at 4 K, with no anomalous behavior such as kinks or hysteresis. The noise voltage follows a 1/(root)f dependence and is approximately 1 (mu) v/(root)Hz at 1 Hz for a ring JFET that is 1250 micrometers in circumference and 20 micrometers long. The gate leakage current reaches 1 pA at a gate voltage of -6 V, and increases exponentially at approximately 1 decade per volt. The noise is within the limits of the requirements for typical VLWIR readout applications; the extrapolated gate leakage current at typical operating biases is higher than the required limit by two orders of magnitude. Planned improvements to reduce the leakage current are discussed.
Cunningham Thomas J.
Fossum Eric R.
No associations
LandOfFree
Cryogenic GaAs JFETs does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Cryogenic GaAs JFETs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cryogenic GaAs JFETs will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1509632