Mathematics
Scientific paper
Dec 1978
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1978itns...25.1166p&link_type=abstract
(IEEE, DNA, NASA, and DOE, Annual Conference on Nuclear and Space Radiation Effects, 15th, Albuquerque, N. Mex., July 18-21, 197
Mathematics
2
Airborne/Spaceborne Computers, Cosmic Rays, Error Analysis, Metal Oxide Semiconductors, Radiation Damage, Random Access Memory, Satellite Transmission, Binary Data, Bits, Component Reliability, Computer Storage Devices, Galactic Radiation, Ionizing Radiation, Mathematical Models
Scientific paper
A model for estimating the cosmic ray induced bit error rate in dynamic MOS RAMs is developed and used to calculate the bit error rate in NMOS dynamic RAMs used in an operating satellite system. The calculated error rate agrees sufficiently well with the observed error rate to conclude that cosmic ray ionization is a likely cause of observed satellite bit errors. The susceptibility of MOS RAMs to cosmic ray induced error is a result of the small charge (sub-picocoulomb) typically stored on a MOS gate to represent a data bit. Relatively small energy deposition (a few MeV) can discharge a storage node, resulting in a bit error. The heavy ion particles present in galactic cosmic rays can provide this energy, resulting in a significant bit error rate for large memory systems in satellites. The dynamic RAM operational factors and design factors affecting ionization-induced bit error rates are discussed.
Blandford T. Jr. J.
Pickel Jim C.
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